inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK667 features drain current C i d =8a@ t c =25 drain source voltage- : v dss = 400v(min) description designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 400 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 8 a p d total dissipation @t c =25 80 w t j max. operating junction temperature 150 t stg storage temperature -55~150 symbol parameter max unit r th j-c thermal resistance, junction to case 1.25 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK667 electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 400 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 1ma 1.0 5.0 v r ds( on ) drain-source on-resistance v gs = 15v; i d = 5a 1.5 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =360v; v gs =0 1 a pdf pdffactory pro www.fineprint.cn
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